silicon epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab.co.uk website: http://www.semelab.co.uk document number 8104 issue 1 2N4912 ? low saturation voltage transistor in a hermetic metal package ? designed for driver circuits, switching and amplifier applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector - base voltage 80v v ceo collector - emitter voltage 80v v ebo emitter ? base voltage 5v i c continuous collector current 1.0a i b base current 1.0a p d total power dissipation at t c = 25c 25w derate above 25c 0.143w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. unit s r jc thermal resistance, junction to case 7 c/w
silicon epitaxial npn transistor 2N4912 semelab limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab.co.uk website: http://www.semelab.co.uk document number 8104 issue 1 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units v (br)ceo * collector-emitter breakdown voltage i c = 10ma i b = 0 80 v i ceo collector-emitter cut-off current v ce = 40v i b = 0 0.5 v ce = 80v v be = -1.5v 0.1 v ce = 80v v be = -1.5v i cex collector-emitter cut-off current t c = 150c 1.0 i ebo emitter-base cut-off current v eb = 5v i c = 0 1.0 i cbo collector-base cut-off current v cb = 80v i e = 0 0.1 ma v be * base-emitter voltage i c = 1.0a v ce = 1.0v 1.3 v ce(sat) * collector-emitter saturation voltage i c = 1.0a i b = 100ma 0.6 v be(sat) * base-emitter saturated voltage i c = 1.0a i b = 100ma 1.3 v i c = 50ma v ce = 1.0v 40 i c = 500ma v ce = 1.0v 20 100 h fe * forward-current transfer ratio i c = 1.0a v ce = 1.0v 10 dynamic characteristics i c = 250ma v ce = 10v f t transition frequency f = 1.0mhz 3.0 22 mhz i c = 250ma v ce = 10v h fe small-signal current gain f = 1.0khz 25 70 i e = 0 v cb = 10v c obo output capacitance f = 1.0mhz 45 100 pf * pulse test: t p = 300us, 2%
silicon epitaxial npn transistor 2N4912 semelab limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab.co.uk website: http://www.semelab.co.uk document number 8104 issue 1 mechanical data dimensions in mm (inches) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 0.71 (0.028) 0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) 1 2 to66 (to - 213aa) pin 1 - base pin 2 - emitter case - collector
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